Abstract
Polycrystalline 3C-SiC was sequentially irradiated at 400 and 750°C with 120keV He2+ and 4MeV Kr15+ ions to 1017 and 4×1016cm−2, respectively. The Kr15+ ions penetrated the entire depth region of the He2+ ion implantation. Three areas of He2+, Kr15+ and He2++Kr15+ ion implanted SiC were created through masked overlapping irradiation. The sample was subsequently annealed at 1600°C in vacuum and characterized using cross-sectional transmission electron microscopy and energy-dispersive X-ray spectroscopy. Compared to the He2+ ion only implanted SiC, He cavities show a smaller size and higher density in the co-implanted SiC. At 25dpa, presence of He in the co-implanted 3C-SiC significantly promotes cavity growth; much smaller voids are formed in the Kr15+ ion only irradiated SiC at the same dose. In addition, local Kr migration and trapping at cavities occurs, but long-range Kr diffusion in SiC is not observed up to 1600°C.
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