Vacancy defects induced in the track region of 132 MeV 12C irradiated SiC

Abstract

Positron annihilation lifetime spectroscopy (PALS) and electron paramagnetic resonance (EPR) have been used in this work to investigate vacancy defects induced in the track region of 132MeV 12C irradiated silicon carbide. Irradiations have been performed at room temperature at a fluence of 2.5×1014cm−2 in N-low doped 6H–SiC and 3C–SiC monocrystals. Silicon monovacancies have been detected in both polytypes using EPR. Their charge state and concentration have been determined in the track and cascade region of the C+ ions. PALS measurements performed as a function of temperature have shown the presence of VSi–C divacancies in the track region for both polytypes.