Abstract
First-principles density functional theory is employed to study the electrical behavior of oxygen and indium vacancies in indium oxide (In 2O 3). The oxygen vacancy is found to be a double donor. The indium vacancy is a triple acceptor, which >can be a compensation center in n-type In 2O 3, leading to n-type carrier reduction. However, its high formation energy under p-type conditions makes it unlikely to be a source of p-type carriers by itself.
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