Abstract
In-grown vacancy defects in bulk and quasi-bulk GaN crystals have been extensively studied with positron annihilation spectroscopy. High concentrations of Ga-vacancy-related defects are found irrespective of the growth method used in crystals with a high O contamination or intentional O doping, and they act as the dominant compensating native defect for n-type conductivity. Low-temperature crystal growth also leads to high concentrations of Ga-vacancy-related defects. Ga vacancies are present in the crystals as a part of the different types of complexes with O, H, and/or VN, depending on the growth conditions.
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