Abstract
Cr-doped semi-insulating GaAs has been investigated by means of position lifetime spectroscopy. In as-grown GaAs the dominant positron trap is a Cr Ga·V As complex. Upon annealing the concentration of this complex increases around 260°C and then decreases at temperatures higher than 500°C. No vacancy agglomeration took place. In low temperature (130 K) e --irradiated (28 MeV) Cr-GaAs, di- and trivacancies were observed together with the gallium antisite, Ga As.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
