Abstract
In non-annealed 6H-SiC samples that were electron irradiated at low temperature, a new EPR signal due to a S=1 defect center with exceptionally large zero-field splitting (D=+652 × 10 ―4 cm ―1 , E=―8 x 10- 4 cm ―1 ) has been observed under illumination. A positive sign of D demonstrates that the spin-orbit contribution to the zero-field splitting exceeds by far that of the spin-spin interaction. A principal axis of the fine-structure tilted by 59° against the crystal c-axis as well as the exceptionally high zero-field splitting D can be qualitatively understood by the occurrence of additional close-lying defect levels in defect clusters resulting in comparatively large second-order spin-orbit coupling. A tentative assignment to vacancy clusters is supported by the observed annealing behavior.
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