Vacancies in as-grown CZ silicon crystals observed by low-temperature ultrasonic measurements

Abstract

By means of the low-temperature ultrasonic measurement, we try to observe the elastic softening due to the vacancies in as-grown silicon crystals grown by the Czochralski (CZ) method. We prepared a high-resistivity CZ silicon crystal ingot comprising the following defect-regions: the void region, the region of ring-like oxidation stacking fault, the Pv-region, the Pi-region, and the region of the dislocation clusters. Both of the elastic constants C 44 (T) and [C11(T) - C 12 (T)/2 measured for the samples taken from the Pv-region exhibit the softening of the type C Γ (T) = C Γ (0) [1 - Δ JT /(T-Θ)] which was also found in our previous study for the non-doped FZ silicon and attributed to the neutral vacancy. No response of the softening to the applied magnetic field is found, as in our previous case of the non-doped FZ silicon. The observed softenings are attributed to the triply degenerate T 2 states of the vacancy accommodating two electrons with anti parallel spins. The samples in the Pi-region exhibit no such softening, confirming that the origin of the softening is the vacancies. A qualitative explanation is given to the measured distribution of the vacancy concentration.