Abstract
Various point defects in silicon are studied theoretically from the point view of positron annihilation spectroscopy. Properties of a positron trapped at a single vacancy, divacancy, vacancy-oxygen complexes $({\mathrm{VO}}_{n}),$ and divacancy-oxygen complex are investigated. In addition to the positron lifetime and positron binding energy to defects, we also calculate the momentum distribution of annihilation photons (MDAP) for high momenta, which has been recently shown to be a useful quantity for defect identification in semiconductors. The influence of atomic relaxations around defects on positron properties is also examined. Mutual differences among the high momentum parts of the MDAP for various defects studied are mostly considerable, which can be used for the experimental defect determination.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
