Abstract
V2O5 thin films were deposited onto fused silica, alumina and conductometric sensor supports by means of rf reactive sputtering from a metallic vanadium target. Film thickness was varied between 200 and 600nm. Argon-oxygen gas mixtures of different compositions controlled by the flow rate were used for sputtering. Temperature of the film substrate was kept constant at 560K. Structural properties and phase composition of as-sputtered thin films were studied by X-ray diffraction at glancing incidence, GIXD, and Raman scattering while Scanning Electronic Microscopy (SEM) was used to investigate film morphology. Electrical properties were determined by means of impedance spectroscopy (0.1–1MHz) over the temperatures range extending from RT to 620K. Thin films of V2O5 exhibited good response towards hydrogen (5–300ppm), methane and propane (50–3000ppm).
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