V2O5:Cu thin films-based device fabrication for high-performance photosensing application

Abstract

The Cu doped V2O5 thin film were prepared by varying the doping concentration from 0, 1, 2, 3, 4 and 5 wt % through cost effective nebulizer spray pyrolysis method. The structural, optical, surface morphology of the samples were carried out by XRD, UV–Visible spectroscopy, FESEM studies. The XRD studies confirmed the orthorhombic structure of the sample and the crystallite size changes from 31 to 44 nm for the undoped to 3 % Cu doped V2O5 thin film. FESEM studies were employed to understand the surface morphology of the thin films and uniform nanorods were observed from this study. The optical bandgap of the samples was determined and 3 % Cu doped V2O5 thin film exhibited lower value of 2.21 eV. The photoluminescent peaks occur at 480, 530 and 575 nm due to the defects present in the samples. The photosensing behaviour of the prepared samples were done and found that the essential photosensing properties such as responsivity (R), detectivity (D*) and external quantum efficiency (EQE) for the V2O5:Cu3 % sample were 4.92 × 10−1 AW−1, 1.06 × 1011 Jones and 159 % respectively which proved that the 3 % Cu doped V2O5 thin film would be a most preferential material for the low cost photodetector.