Abstract
Defect equilibrium diagrams have been constructed for intrinsic and extrinsic defects in GaN:Mg crystals using the quasi-chemical formalism, and the formation of (VN-MgGa)× and (VN-MgGa••) defect complexes has been analyzed. The results indicate that, under equilibrium conditions, VN vacancies in the charge state 3+ and Mg′Ga impurities form (VN-MgGa)•• defect complexes, which compensate acceptors.
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