Abstract
In this work, we report on recent advances in UVC emitters and detectors based on AlGaN on single crystal AlN substrates. We perform point defect management via chemical potential control and extended defect management via growth on low threading dislocation density single crystal AlN substrates and demonstrate reliable UVC LEDs at high power densities (>40 Wcm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−2</sup> ) on transparent AlN substrates and high gain (>300000) solar blind avalanche photodiodes with high quantum efficiency (>70%) and near ideal breakdown fields. We also report a comparison with devices on foreign substrates (sapphire) with those on native AlN substrates revealing a general improvement in performance by orders of magnitude.
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