UV-Vis optoelectronic properties of α-SnWO4: A comparative experimental and density functional theory based study

Ahmed Ziani,Kazuhiro Takanabe,Dalal Noureldine,Moussab Harb

doi:10.1063/1.4930005

Ahmed Ziani, Kazuhiro Takanabe + Show 2 more

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https://doi.org/10.1063/1.4930005

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Abstract

We report a combined experimental and theoretical study on the optoelectronic properties of α-SnWO4 for UV-Vis excitation. The experimentally measured values for thin films were systematically compared with high-accuracy density functional theory and density functional perturbation theory using the HSE06 functional. The α-SnWO4 material shows an indirect bandgap of 1.52 eV with high absorption coefficient in the visible-light range (&gt;2 × 105 cm−1). The results show relatively high dielectric constant (&gt;30) and weak diffusion properties (large effective masses) of excited carriers.

Highlights

UV-Vis optoelectronic properties of α-SnWO4: A comparative experimental and density functional theory based study 2015, 3 (9):096101 APL Materials
The experimentally measured values for thin films were systematically compared with high-accuracy density functional theory and density functional perturbation theory using the HSE06 functional
The α-SnWO4 material shows an indirect bandgap of 1.52 eV with high absorption coefficient in the visible-light range (>2 × 105 cm−1)

Summary

Introduction

UV-Vis optoelectronic properties of α-SnWO4: A comparative experimental and density functional theory based study 2015, 3 (9):096101 APL Materials. UV-Vis optoelectronic properties of α-SnWO4: A comparative experimental and density functional theory based study

Results

Conclusion