Abstract
Patterned KTa0.50Nb0.50O3 (KTN50) thin films with a (100) preferred orientation were successfully crystallized at 700°C on MgO (100) substrates. Both benzoylacetone (BZAC)-modified KTN precursor and 2-ethoxyethanol (EGMEE)-modified KTN precursor films showed charge-transfer UV absorption. The decrease in CH and CO absorptions in the IR spectra for the EGMEE-modified precursor was more rapid than that in the BZAC-modified precursor. Perovskite KTN films with a prominent (100) orientation crystallized at 700°C on MgO (100) substrates from both systems. However, the epitaxy of KTN films from the EGMEE-modified precursor combined with UV treatment was better than that from the BZAC-modified precursor. The optical transmittance of KTN films from the EGMEE-modified precursor showed a better interference fringe than that from the BZAC-modified precursor. UV-treated KTN films on Pt(100)/MgO(100) substrates, which were derived from the EGMEE-modified precursor, revealed the highest dielectric constant and the lowest loss. Patterned KTN films from the EGMEE-modified precursor had a smooth and pore-free surface, according to scanning electron microscopy (SEM) observation.
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