Abstract
Bulk laser-graphitized microstructures have been fabricated in type IIa single-crystal 1.2-mm-thick diamond plates by UV laser irradiation with 10-ps pulses at λ=355 nm wavelength. It is found that the crystallographic-plane-dependent character of structural modifications in the bulk is influenced by the laser wavelength and the direction of the laser beam incidence relative to a given crystallographic direction (<100> or <110>) in the diamond plates. High-order Stokes Raman lasing is observed during UV laser irradiation and bulk modifications of single-crystal diamond. It is shown that the formation of bulk microstructures results in dramatic changes in the behavior of the stimulated Raman scattering in diamond. The formation and migration of the 3H defects (self-interstitial related centers) is also found to take place in the course of bulk microstructuring with UV ps-pulses. Important limitations of the bulk microstructuring caused by high internal stresses in laser-modified regions resulting in ‘uncontrollable’ damage of the diamond single crystals are discussed.
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