Abstract
As the key device in a UV warning system, a solid‐state UV photodetector has attracted great attention. Herein, a new UV photodetector structure based on vertical (Al, Ga)N nanowires with graphene electrode and Si substrate is designed and demonstrated. By graphene/vertical (Al, Ga)N nanowire array heterojunction, the rectifying characteristics of I–V curve are formed, and the dark current is 54 nA at −2 V bias. The fabricated device exhibits a responsivity of 0.176 mA W−1 at the bias of −2 V, as well as a stable switching characteristic. It is proposed that the photogenerated electrons and holes can reach positive and negative electrodes by diffusion or tunneling effect, even with thick AlN sections. This method can promote the implementation of low cost for UV photodetector with adjustable detection range nowadays.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
