Abstract
Integrating two-dimensional (2D) materials into the current nanoelectronic process requires control over the deposition of gate oxides onto these materials. Atomic layer deposition (ALD) relies on surface dangling bonds that are scarce for 2D materials. This review summarizes the advances made in understanding and controlling the nucleation of ALD oxides on these materials. As an example, we focus on ozone-based processes including UV-ozone pretreatments, which we have found to effectively functionalize the surface of molybdenum disulfide. Furthermore, we discuss the advantages and limitations of various functionalization or seeding techniques, such as limits in scalability or damage to the 2D materials.
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