Abstract
KrF excimer laser etching and smoothening of polycrystalline diamond films grown on Mo and W substrates by arc discharge plasma chemical vapour deposition (CVD) were investigated. The effects of angle of laser beam incidence and pulse duration on the surface roughness of the laser-treated diamond films were determined. A scanning laser beam was used to polish the diamond films over a large area. Laser-controlled diamond growth by means of pulse irradiation during CVD was performed. The electrical conductivity of the diamond films as well as the electrical resistance of the laser-produced conductive pathways were studied in the temperature range 300 ⩽ T ⩽ 800 K. On the basis of the electrical resistance measurements, the laser-induced conductive surface layer was found to be unstable under oxidation in air at 450°C and in an atomic hydrogen atmosphere in the course of the diamond CVD process.
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