Abstract
Large bandgap blueshifts in III–V quantum semiconductor microstructures are achievable with UV-laser induced quantum well intermixing (QWI). We report on the application of the UV-laser QWI technique to investigate bandgap engineering of a compressively strained InGaAsP/InP quantum well laser microstructure. The attractive performance of the technique, determined by the ability of a laser to generate point defects, has been demonstrated with bandgap blueshifts reaching 142nm, with enhancement of photoluminescence intensity. We have also investigated this technique for post-growth wafer level processing designed for the fabrication of laser diodes.
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