Abstract
We performed a feasibility study of UV detection using an AlOx/n-GaN structure. The AlOx layer was deposited on n-GaN using diethyl aluminum ethoxide as a precursor. We obtained a refractive index of 1.59, a bandgap of 7.0 eV, and an oxygen composition of 1.48 for the AlOx layer. Even at higher temperatures, no significant change appeared in the capacitance–voltage curves, which were close to the ideal curve, indicating well-controlled and stable interface properties. From the photo response measurements, pronounced variation of the interface potential at the AlOx/GaN interface was observed under UV illumination, which was independent of temperature. The gate bias systematically modulated the depth of the interface potential well and thereby the density of accumulated holes resulting from UV illumination. The AlOx/GaN structure is sensitive to flame with a low power density.
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