Abstract

ZnO thin film was fabricated by thermally oxidized Zn at 600°C for 1 h. A surface containing nanostructured dumbbell and lines was observed by scanning electron microscope (SEM). The ZnO resistor device was formed after the following Ti/Au metallization. The device resistance was characterized at different oxygen pressure environment in the dark and under ultraviolet (UV) light illumination coming from the mercury lamp with a short pass filter. The resistance increases with the increase of oxygen pressure. The resistance decreases and response increases with the increase of light intensity. Models considering the barrier height variation caused by the adsorbed oxygen related species were used to explain these results. The UV light illumination technology shows an effective method to enhance the detection response for this ZnO resistor oxygen sensor.

Highlights

  • In the past few years, the wide band gap material zinc oxide (ZnO) shows its abilities in many applications

  • As the sensing property for some oxide-based sensors changes under light illumination [13] and the ZnO is a wide band gap photodetector, the conductivity varies under UV light illumination [14,15,16,17,18]

  • We study the effect of sensing response resistance ratio difference for ZnO O2 sensor under UV light illumination

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Summary

Introduction

In the past few years, the wide band gap material zinc oxide (ZnO) shows its abilities in many applications. Devices such as field emission device [1], surface acoustic wave device [2], photo diode [3], light emitting diodes [4], solar cells [5], and gas sensors [6,7,8] were studied. In the gas sensing applications, nanostructured ZnO with high surface-volumeratio properties shows the promotive performance [9, 10]. Less response time was characterized for such ZnO oxygen (O2) gas sensing characteristics under UV light illumination. We study the effect of sensing response resistance ratio difference for ZnO O2 sensor under UV light illumination

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