Abstract
High-density gallium (Ga)-doped ZnO nanosheets were fabricated successfully on a glass substrate by aqueous solution method. The diameter and length of the Ga-doped ZnO nanosheets were $\sim 25$ nm and 2.16 $\mu \text{m}$ , respectively. In the dark, the turn-ON field of Ga-doped ZnO nanosheets was 4.67 V/ $\mu \text{m}$ , and the field enhancement factor ( $\beta $ ) was 4037. Under UV illumination, the turn-ON field and field enhancement factor were 2.83 V/ $\mu \text{m}$ and 6616, respectively.
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