UV-curable organic–inorganic hybrid gate dielectrics for organic thin film transistors

Abstract

UV-curable hybrid thin films were prepared from ZrO2 hybrid sols containing the acrylic monomer, DPHA, on substrates. The prepared ZrO2 hybrid sols showed long-term storage stability. Hybrid dielectrics were prepared by sol–gel process and UV cross-linking below 160°C. Leakage currents of dielectric layers remained below 10−6A in 2MV/cm and dielectric constants were measured to be 3.85–4 at 1kHz. In addition, organic–inorganic hybrid thin films have smooth and hydrophobic surface. Pentacene OTFTs with thin hybrid dielectrics exhibit of mobility as large as 2.5cm2/Vs, subthreshold swing as low as 0.2V/decade, an on–off ratio of 105. These results demonstrated that UV-curable sol–gel hybrid systems are suitable for gate dielectrics in OTFTs.