Abstract
A series of Zn2GeO4:Tb3+, Eu3+ phosphors were prepared by a high temperature solid state reaction technique. The luminescent properties and energy transfer (ET) processes of phosphors were investigated by the X-ray diffraction (XRD), diffuse reflection, thermoluminescence spectra, photoluminescence spectra and decay curves. Under the ultraviolet (UV) radiation, Zn2GeO4 host presents a broad emission band from 350 to 600nm, and the emission band at 430nm is originated from the Vo′, Zni·, VGe and VZn″ native defects. Eu3+ doped Zn2GeO4 has low absorption in the near-UV and blue region, and there is no ET from host to Eu3+ ions. However, the ET from Zn2GeO4 to Eu3+ may be realized by utilizing Tb3+ as the ET bridge to connect Eu3+ and Zn2GeO4 host. Zn2GeO4:Tb3+, Eu3+ exhibits a broad absorption band in the range of 250–450nm, which could be excited by near-UV or blue LED chip. Moreover, the transformation process of crystal structure and defects were investigated by the thermoluminescence and photoluminescence spectra of Zn2GeO4:Tb3+, Eu3+.
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