Abstract
In this research, the forming-free CBRAM is realized by high pressure hydrogen annealing method (HPHA). With the structure of Cu/HfO2/TiN, the copper will be ionized by the hydrogen ion under the high pressure environment; meanwhile the copper ion will diffuse to the HfO2. Thus, the diffused copper ion can earlier form the precursor seed to generate the filament because of short migration distance. Besides, the characteristic of CBRAM is also improved, which can be explained by the experimental result and the proposed model.
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