Utilizing cluster percolation theory to analyze electrical resistivity jumps in high-entropy alloy thin films containing small atoms

Abstract

The high-entropy alloy thin films (HEATFs) with non-metal small atoms have obvious characteristics of adjustable properties. However, the mismatch phenomenon of phase-transition and electrical resistivity jump usually occur during the interstitial-filling. To explain this phenomenon, a new method is proposed that transforms the multi-color percolation of HEATFs to two-color percolation. The [N/O-M6] clusters with high electrical resistivity and [▫-M6] clusters with low electrical resistivity in (NbMoTaW)100-xNx and (NbMoTaWV)100-xOx films are equivalent to black and white spheres, respectively (M and ▫ ▫-M6]) reaches the face-centered-cubic and amorphous percolation thresholds of 0.198 and 0.27, respectively, a conductive percolation path is formed, contributing to a significant reduction in electrical resistivity. This work enables it possible to predict the composition at sudden change in electrical resistivity of HEATFs with non-metallic small atoms, which has great significance for the functional composition design.