Abstract
We demonstrate the use of thin BN sheets as supports for imaging nanocrystals using lowvoltage (80 kV) aberration-corrected high resolution transmission electron microscopy. Thisprovides an alternative to the previously utilized 2D crystal supports of graphene andgraphene oxide. A simple chemical exfoliation method is applied to get few layer boronnitride (BN) sheets with micrometer-sized dimensions. This generic approach of using BNsheets as supports is shown by depositing Mn doped ZnSe nanocrystals directly onto theBN sheets and resolving the atomic structure from both the ZnSe nanocrystals and the BNsupport. Phase contrast images reveal moiré patterns of interference between the beamsdiffracted by the nanocrystals and the BN substrate that are used to determinethe relative orientation of the nanocrystals with respect to the BN sheets andinterference lattice planes. Double diffraction is observed and has been analyzed.
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