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Abstract
The detrimental influence of oxygen on the performance and reliability of V/III nitride based devices is well known. However, the influence of oxygen on the nature of the incorporation of other co-dopants, such as rare earth ions, has been largely overlooked in GaN. Here, we report the first comprehensive study of the critical role that oxygen has on Eu in GaN, as well as atomic scale observation of diffusion and local concentration of both atoms in the crystal lattice. We find that oxygen plays an integral role in the location, stability, and local defect structure around the Eu ions that were doped into the GaN host. Although the availability of oxygen is essential for these properties, it renders the material incompatible with GaN-based devices. However, the utilization of the normally occurring oxygen in GaN is promoted through structural manipulation, reducing its concentration by 2 orders of magnitude, while maintaining both the material quality and the favorable optical properties of the Eu ions. These findings open the way for full integration of RE dopants for optoelectronic functionalities in the existing GaN platform.
Highlights
In their molecular structure, which is incorporated into the material during growth
This can potentially lead to the same detrimental effects for devices that high ambient oxygen concentrations do, but this is often disregarded in studies[20,21,37,38,39]; this issue needs to be addressed to realize the commercialization of these materials
Our study reveals that oxygen clearly plays a critical role on the incorporation of Eu into GaN, and the optical properties of the resulting Eu centers
Summary
In their molecular structure, which is incorporated into the material during growth. This can potentially lead to the same detrimental effects for devices that high ambient oxygen concentrations do, but this is often disregarded in studies[20,21,37,38,39]; this issue needs to be addressed to realize the commercialization of these materials. GaN:Eu is a promising material for the active layer of a GaN-based red LED, which has garnered considerable attention over the last few years, with preliminary LED devices containing a single 300nm active layer having already been demonstrated[38,42]. As with other work on GaN:RE, the RE source (in this case Eu(DPM)3), contained significant concentrations of oxygen in its molecular structure. In order to truly understand the role of oxygen, a new oxygen-free Eu source was developed, EuCppm[2], which allowed full control of the O content by means of co-doping
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