Abstract
In this study, we added several aromatic amine compounds as dopants to an ambipolar polymer semiconductor, PDBTAZ, and studied the charge transport behavior of the doped polymer thin films in organic thin film transistors. The trap energy (ET), which is the HOMO energy difference between the amine dopant and the polymer, was found related to the hole transport suppression effect of these amines. For an amine with ET < 0.25 eV, at a 2% dopant concentration, little changes in the hole transport characteristics of the doped polymer films were observed. In contrast, for an amine with ET > 0.25 eV, complete hole transport suppression was realized. This study offers a useful approach to converting an ambipolar polymer semiconductor into a unipolar n-type polymer semiconductor.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
