Abstract
We present sell-consistent calculations for one-side-doped strained quantum wells grown along the (111) direction. The built-in piezoelectric field causes the carriers to shift towards the interface near the undoped barrier and in this way the impurity scattering is reduced. For given structure parameters we find that a larger carrier concentration is obtained for (111) growth than tor the more common (001) growth, where there is no piezoelectric field. Conversely, for a fixed carrier concentration one can have a wider spacer layer for (111) growth, which gives an additional reduction of impurity scattering.
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