Abstract
Spectra from xenon ions have been recorded at the NIST electron beam ion trap (EBIT) and the emission into a 2% bandwidth at 13.5 nm arising from 4d → 5p transitions compared with those from 4d → 4f and 4p → 4d transitions in Xe XI and also with that obtained from the unresolved transition array (UTA) observed to peak just below 11 nm. It was found that an improvement of a factor of 5 could be gained in photon yield using the UTA rather than the 4d → 5p emission. The results are compared with atomic structure calculations and imply that a significant gain in efficiency should be obtained using tin, in which the emission at 13.5 nm comes from a similar UTA, rather than xenon, as an EUVL source material.
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