Using yield to predict long-term reliability of integrated circuits: Application of Boltzmann-Arrhenius-Zhurkov model

Abstract

Modified Boltzmann-Arrhenius-Zhurkov (BAZ) constitutive model is applied to predict the reliability of integrated circuits. The model accounts for the impact of physical defects and process variations on the stress-free activation energy, which is viewed as a critical material's property. It is shown that the probability of non-failure (reliability) and the corresponding mean-time-to-failure (MTTF) can be evaluated from the failure-oriented-accelerated-testing (FOAT) geared to the modified BAZ model. The general concept is illustrated by the experimental data.