Using Taguchi Method to Optimize Polishing Parameters in Ice Fixed Abrasive Polishing

Abstract

Ice fixed abrasive polishing (IFAP) was used to polish single crystal silicon wafer. Polishing parameters were polishing pressure, table velocity, eccentricity, and polishing time. Using Taguchi method, the influences of the polishing parameters on material removal rate (MRR) and surface roughness (Sa) were invested. The results show that polishing pressure plays the most significant role on MRR followed by table velocity; as far as Sa is concerned; polishing time is the most important one, followed by table velocity. In order to get high MRR during IFAP of silicon wafer, the optimal processing parameters are: polishing pressure 0.1 MPa, table velocity 400 r/min, eccentricity 30 mm, and polishing time 60 min. The best Sa can be obtained when the optimal processing parameters are: polishing pressure 0.075 MPa, table velocity 300 r/min, eccentricity 20 mm, and polishing time 40 min. The experimental results illustrate that the Taguchi method is a viable way to obtain the optimum conditions for high MRR and best Sa.