Using Si-doped diamond plate of sandwich type for spatial profiling of laser beam

Abstract

We demonstrated a laser beam profiling method based on imaging of the laser induced photoluminescence of a transparent single-crystal diamond plate. The luminescence at 738 nm is caused by silicon-vacancy color centers formed in the epitaxial diamond film by its doping with Si during CVD growth of the film. The on-line beam monitor was tested for a cw laser emitting at 660 nm wavelength.