Abstract
The conduction of the reactor fast neutron-compensated n-Ge (Nsb ∾ 1015-1019 cm-3) has been studied. The formation of the disordered regions (DR) has been shown to generate an electrostatic potential with modulates the energy bands and affects strongly most of the electronic properties of a semiconductor. The DR-compensated germanium is shown to possess most of the properties of the amorphous semiconductors. The fact that Ge-crystals with DRs exhibit typical properties of the amorphous state permits one to consider this material as a controlled model of the amorphous semiconductor.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: Physica B+C
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.