Abstract
In this study, we investigated the influence of a buffer layer of molybdic oxide (MoO 3) at the metal/organic junction on the behavior of organic base-modulation triodes. The performance of devices featuring MoO 3/Al as the emitter electrode was enhanced relative to that of corresponding devices with Au and Ag, presumably because of the reduced in the contact barrier and the prevention of metal diffusion into the organic layer. The device exhibited an output current of −16.1 μA at V B = −5 V and a current ON/OFF ratio of 10 3. Using this architecture, we constructed resistance–load inverters that exhibited a calculated gain of 6.
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