Abstract

This study used improved simulated annealing arithmetic to improve the semiconductor packaging ball placement process capability. The simulated annealing computing process was combined with an artificial neural network, Metropolis algorithm, and sequential Gaussian simulation. Grey relation analysis was used as the target value, which is intended to obtain the optimum parameter design of process capability. The results showed that the substrate design-Pad Open is 0.30 mm ball size, 0.275 mm Pad open, Profile type B, maximum temperature 236 (°C), solder melting time 53 (s), preheating temperature 176 (°C), and a solder ball component, as SAC405 can result in a parameter design for optimal solder ball shear strength of Cpk = 2.38 and [Formula: see text]. This optimum parameter design process is better than other methods, and it reduces the cost waste of extra defectives.

Highlights

  • IntroductionThe purpose of packaging is to provide the finished product (package) with an interface, in order to connect the internal electrical signal via the packaging material to the system and to prevent the silicon chip from being damaged and corroded by external force, water, moisture, and chemicals

  • The purpose of packaging is to provide the finished product with an interface, in order to connect the internal electrical signal via the packaging material to the system and to prevent the silicon chip from being damaged and corroded by external force, water, moisture, and chemicals

  • In terms of ball placement, the pad of the substrate is coated with flux, and the Solder Ball is placed on the Pad of the substrate at the high temperature

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Summary

Introduction

The purpose of packaging is to provide the finished product (package) with an interface, in order to connect the internal electrical signal via the packaging material to the system and to prevent the silicon chip from being damaged and corroded by external force, water, moisture, and chemicals. In terms of ball placement, the pad of the substrate is coated with flux, and the Solder Ball is placed on the Pad of the substrate at the high temperature (150°C–245°C) of IR-Reflow furnace, the Solder Ball reacts with flux and half of it melts on the substrate pad. In terms of the research setting range of ball placement, this study uses the reflow parameter as the research subject and uses solder ball strength. Through the high temperature of the reflow oven (about 150°C–245°C), half of the solder ball will be fused to the pad of the substrate after it reacts with the flux. This study used the reflow parameter as the study subject and used the processing stability of the solder ball strength as the target response value. Taking the TFBGA product as the subject for verification, the thrust strength of the solder ball (Figure 3) was used as the quality characteristics, in which case the higher the thrust is of the solder ball, the better it is, and so it exhibits the LTB characteristic

Discussion on process parameters
Results and discussion
Conclusion and future research
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