Abstract
This work presents a focused beam approach using a polarizer-sample-analyzer (PSA) imaging ellipsometer to deduce multiple sets of ellipsometric parameters with the information of multiple incident angles in one measurement. Using a three-intensity measurement technique, an additional parameter α can be obtained to locate the ideal incident plane of a focused beam. Meanwhile, the ellipsometric parameters on the ideal incident plane are also analyzed. Based on α and the ellipsometric parameters, the variation in the intensity and phase response with a range of incident angles are examined without using a mechanical scanning apparatus. Measurements made of two zones on a reference wafer with different film thicknesses demonstrate results that are almost consistent with those predicted by the theoretical model.
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