Using heavy ion backscattering spectrometry (HIBS) to solve integrated circuit manufacturing problems

Abstract

Heavy Ion Backscattering Spectrometry (HIBS) is a new IBA tool for measuring extremely low levels of surface contamination on very pure substrates, such as Si wafers used in the manufacture of integrated circuits. HIBS derives its high sensitivity through the use of moderately low energy (∼100 keV) heavy ions (e.g. C 12) to boost the RBS cross-section to levels approaching 1000 b, and by using specially designed time-of-flight (TOF) detectors which have been optimized to provide a large scattering solid angle with minimal kinematic broadening. A HIBS User Facility has been created which provides US industry, national laboratories, and universities with a place for conducting ultra-trace level surface contamination studies. A review of the HIBS technique is given and examples of using the facility to calibrate Total-Reflection X-ray Fluorescence Spectroscopy (TXRF) instruments and develop wafer cleaning processes are discussed.