Abstract
ABSTRACTIon implanted CoSi2 as a gate doping source has been studied as a compatible process to the Silicide-As Diffusion-Source (SADS) process which has been widely considered for shallow source/drain junction formation. The effects of the polysilicon gate microstructure on diffusion behavior and the thermal stability of CoSi2 has been investigated. It has been found that CoSi2 formed on reoxidized polysilicon gates has poor thermal stability but requires short time to achieve degenerate doping near the polysilicon/gate oxide interface. On the other hand, CoSi2 formed on as-deposited amorphous silicon has excellent thermal stability but requires longer time to achieve degenerate doping near the polysilicon/gate oxide interface. The trade-off between the required thermal budget to achieve degenerate doping and thermal stability of the CoSi2/polysilicon gate structure will be discussed. In optimizing the process, our results indicated that reoxidized amorphous Si gates have both good thermal stability as well requiring short time to achieve degenerate doping. The thermal degradation of CoSi2 was found to have little effect on the gate oxide breakdown voltage.
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