Using Carbon Tetrachloride for Carbon Doping AlXGa1-XAs Grown by Metalorganic Chemical Vapor Deposition

Abstract

Carbon doped AlX Ga1-X As was grown by metal organic chemical vapor deposition, using liquid carbon tetrachloride ( CCl4) as a p-type dopant, in the aluminum content range of 0 to 1 and growth temperature range 600 to 750° C. By using the diluting line for CCl4 a remarkably wide range of carrier concentration was obtained at 700° C: the third order range of 1×1016 to 2×1019 cm-3 for GaAs, and the second order range of 1×1017 to 5×1019 cm-3 for AlX Ga1-X As (X≤0.3). This indicates that carbon is a promising dopant for optoelectronic devices, such as lasers and detectors, that have a relatively high aluminum content and are grown at a higher growth temperature.