Abstract
AbstractC60+ sputtering was firstly used to determine depth profile of nitrogen in zinc oxide materials by time‐of‐flight (ToF) SIMS. Compared to traditional Cs+ sputtering depth profiling, the C60+ sputtering provides increase in signal intensity by a factor of over 200 and improves the detection limit by a factor of about 10. In addition, our XPS results show that sputtering zinc oxide materials by 10 keV C60+ leads to very little carbon deposition at the bottom of the sputter crater. Copyright © 2010 John Wiley & Sons, Ltd.
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