Using Bulk-driven Technology Operate in Subthreshold Region to Design a Low Voltage and Low Current Operational Amplifier

Abstract

The paper deeply investigate the characteristics of a MOSFET device using the bulk-driven technique to operate in subthreshold region for low current, low input voltage, high open loop gain, low power consumption, and low noise. It can used to design the low voltage amplifier to improve the limitation for the V GS voltage and the saturation voltage within the amplifier. The low voltage and current operation amplifier is applied, and the source cross-coupled pair is used within the differential input. The static current of the amplifier is effectively reduced. Using HSPICE to simulate the characteristics of the amplifier for the TSMC 0.18μm CMOS technology is verified. As the result shown that V DD = 0.6V, power consumption< 10μW, open loop gain= 70dB. The variation of amplifier for the supplied voltage to the temperature is improved by the negative temperature for the operated subthreshold region. The used bulk-driven CMOS device in sub-threshold is exactly designed in the operation amplifier for low-voltage and low-power..