Abstract
In the smartphone industry, there is a clear trend of developing high screen-to-body ratio display. In order to achieve this demand, we proposed the idea of integrating photo sensing devices into display panels. The photosensitive characteristic of amorphous silicon (a-Si) gap-type thin-film transistors is reviewed and the applicability is examined from the viewpoints of ambient light sensor and proximity sensor. The advantages and feasibility of this idea are fully investigated.
Highlights
INTRODUCTIONSmartphones are almost a must-have communication device for everyone. The popularity of the usage drives the thriving development of smartphone displays
Nowadays, smartphones are almost a must-have communication device for everyone
The drain current versus gate voltage (ID–VG) characteristic curves of conventional thin-film transistors (TFTs) and gap-type TFT under ambient light illumination are shown in Fig. 4(a) and (b), correspondingly
Summary
Smartphones are almost a must-have communication device for everyone. The popularity of the usage drives the thriving development of smartphone displays. The notch area is not so welcome by users and the driving force to hide the components away continues Among the functions, both ALS and proximity receiver are basically light sensors. Amorphous silicon (aSi) gap-type thin-film transistors (TFTs) are good light sensing devices with high photosensitivity [7]–[8]. Their fabrication process is fully compatible to that of the conventional a-Si TFTs. More importantly, their fabrication process is fully compatible to that of the conventional a-Si TFTs They can be integrated into the display panel in the border area with no extra charge. The possibility of using gap-type TFTs as ALS and proximity receiver for smartphones is demonstrated
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