Abstract
In this study, we introduced mesh-patterned Ag grid (width: 15–20μm) to enhance the light output power of near ultraviolet (385nm) AlGaN-based light emitting diode (LEDs). The Ag grid was intentionally agglomerated by annealing at 500°C for 1min in air. The output performance of AlGaN-based LEDs fabricated with Ag-grid/indium tin oxide (ITO) electrodes was compared with those with ITO electrode. At a wavelength of 385nm, the samples had transmittances of 54.2–74.1%. LEDs with the Ag-grid/ITO contacts exhibited lower forward voltages of 3.32–3.57V at 20mA than LED with the ITO electrode (3.64V). The LEDs with the Ag-grid/ITO electrodes exhibited 15.6–15.9% higher light output (at 400mW) than that with the ITO electrode. Based on finite-difference time-domain simulations, the improved output performance is briefly described and discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
