Abstract
Twelve MeV electron beams were used to irradiate common P +NN + diodes (1 A and 1 kV) in order to transfer them into high frequency rectifying ones. Some interesting results have been obtained. It seems that this method is superior to the traditional gold-doping technique in controlling precisely the lives of the minority carriers. Compared with the later electron beam irradiation made the reverse recovery time ( t rr) and FWD-voltage ( V F) of the diodes better consistent and repeatable. The high temperature performance was also obviously improved. The qualified rate of diodes was enhanced by more than 30%.
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