Use of WN<tex>$_ X$</tex>as the Diffusion Barrier for Interconnect Copper Metallization of InGaP–GaAs HBTs

Abstract

Use of WN/sub X/ as the diffusion barrier for interconnect copper metallization of InGaP-GaAs heterojunction bipolar transistors (HBTs) was studied. The WN/sub X/ (40 nm) and Cu (400 nm) films were deposited sequentially on the InGaP-GaAs HBT wafers as the diffusion barrier and interconnect metallization layer, respectively, using the sputtering method. As judged from the data of scanning electron microscopy, X-ray diffraction, Auger electron spectroscopy, and sheet resistance, the Cu--WN/sub X/--SiN and Cu--WN/sub X/--Au structures were very stable up to 550/spl deg/C and 400/spl deg/C annealing, respectively. Current accelerated stress test was conducted on the Cu--WN/sub X/ metallized HBTs with V/sub CE/=2 V, J/sub C/=140 kA/cm/sup 2/ and stressed for 55 h, the current gain (/spl beta/) of these HBTs showed no degradation and was still higher than 100 after the stress test. The Cu--WN/sub X/ metallized HBTs were also thermally annealed at 250/spl deg/C for 25 h and showed no degradation in the device characteristics after the annealing. For comparison, HBTs with Au interconnect metallization were also processed, and these two kinds of devices showed similar characteristics after the stress tests. From these results, it is demonstrated that WN/sub X/ is a good diffusion barrier for the interconnection copper metallization of GaAs HBTs.