Abstract

Thin films are used to investigate the transformation by heat treatment of a disordered phase into an ordered phase in two different cases: compositional disorder in the case of metallic (Au-Cu) alloys, and positional disorder in the case of an amorphous semiconductor (Ge). The transformation is followed by simultaneous resistance measurements and controlled by electron diffraction and electron microscopy; its effects on the optical properties are measured. The use of thin films allows one to characterize accurately the phases before and after the transformation, and to check that the transformation has been completed.

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