Abstract
The use of selective chemically vapor deposited tungsten with a polyimide (P.I.) mask for local interconnects has been demonstrated with a sheet resistance of 0.60 Ω/□. The selective tungsten deposition conditions were examined. The growth rate (22–85 nm/min) was proportional to the partial pressure (0.15–0.60 mTorr). The W resistivity (14–26 μΩ‐cm) and stress (, in large features) decreased as the deposition temperature (300–360°C) was increased. The selectivity was worse at higher deposition temperatures and improved for high ratio. Loss of selectivity (stray W nuclei) was removed when the P.I. was plasma stripped. The process stability was examined (with a sheet resistance of 0.60 Ω/□) the overall standard deviation of the sheet resistance (wafer to wafer and within wafer) was 7.6%.
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