Abstract
The experimental results on the influence of UV and IR illumination and hydrogen ambient on the radiation response of metal-oxide-semiconductor (MOS) and bipolar transistors are presented and discussed. It is shown that preliminary UV treatment increases a radiation-induced degradation of MOS threshold voltage and effect of preliminary IR illumination on BJT radiation response depends on emitter–base bias during the illumination. The probable physical mechanism of the effects is discussed.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
